features trenchfet power mosfets 175 c junction temperature new low thermal resistance package pwm optimized for fast switching applications automotive - 42-v eps and abs - dc/dc conversion - motor drives isolated dc/dc converters - primary-side switch - high voltage synchronous rectifier SUM16N20-125 vishay siliconix new product document number: 72076 s-31273?rev. c, 16-jun-03 www.vishay.com 1 n-channel 200-v (d-s) 175 c mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) 200 0.125 @ v gs = 10 v 16 200 0.150 @ v gs = 6 v 14.6 d g s n-channel mosfet to-263 s d g top view SUM16N20-125 absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 200 gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 16 c on ti nuous d ra i n c urren t (t j = 175 c) t c = 125 c i d 9.2 a pulsed drain current i dm 25 a avalanche current i ar 10 repetitive a valanche energy a l = 0.1 mh e ar 5 mj maximum power dissipation a t c = 25 c p d 100 b w maximum power dissipation a t a = 25 c c p d 3.75 w operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 40 c/w junction-to-case (drain) r thjc 1.5 c/w notes a. duty cycle 1%. b. see soa curve for voltage derating. c. when mounted on 1? square pcb (fr-4 material).
SUM16N20-125 vishay siliconix new product www.vishay.com 2 document number: 72076 s-31273?rev. c, 16-jun-03 specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 200 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 2 4 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 160 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 160 v, v gs = 0 v, t j = 125 c 50 a g dss v ds = 160 v, v gs = 0 v, t j = 175 c 250 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 25 a v gs = 10 v, i d = 15 a 0.100 0.125 drain source on state resistance a r ds( ) v gs = 10 v, i d = 15 a, t j = 125 c 0.268 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 15 a, t j = 175 c 0.388 v gs = 6 v, i d = 10 a 0.100 0.150 forward transconductance a g fs v ds = 15 v, i d = 25 a 10 s dynamic b input capacitance c iss 1330 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 140 pf reverse transfer capacitance c rss 58 total gate charge c q g 24 36 gate-source charge c q gs v ds = 100 v, v gs = 10 v, i d = 25 a 9 nc gate-drain charge c q gd ds , gs , d 9 gate resistance r g 4.0 turn-on delay time c t d(on) 10 15 rise time c t r v dd = 100 v, r l = 4 175 260 ns turn-off delay time c t d(off) v dd = 100 v , r l = 4 i d 25 a, v gen = 10 v, r g = 2.5 25 40 ns fall time c t f 110 165 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 16 a pulsed current i sm 25 a forward voltage a v sd i f = 25 a, v gs = 0 v 1.0 1.5 v reverse recovery time t rr 105 160 ns peak reverse recovery current i rm(rec) i f = 25 a, di/dt = 100 a/ s 7 11 a reverse recovery charge q rr f , 0.37 0.88 c notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
SUM16N20-125 vishay siliconix new product document number: 72076 s-31273?rev. c, 16-jun-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0 400 800 1200 1600 2000 0 40 80 120 160 200 0 4 8 12 16 20 0 8 16 24 32 40 0 10 20 30 40 50 0 5 10 15 20 25 0.00 0.04 0.08 0.12 0.16 0.20 0 5 10 15 20 25 0 5 10 15 20 25 0123456 0 5 10 15 20 25 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds - drain-to-source voltage (v) v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) q g - total gate charge (nc) i d - drain current (a) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - transconductance (s) g fs 25 c -55 c t c = 125 c v ds = 100 v i d = 25 a v gs = 10 thru 6 v v gs = 10 v c iss c oss t c = - 55 c 25 c 125 c 4 v - on-resistance ( r ds(on) ) - drain current (a) i d i d - drain current (a) c rss 5 v v gs = 6 v
SUM16N20-125 vishay siliconix new product www.vishay.com 4 document number: 72076 s-31273?rev. c, 16-jun-03 typical characteristics (25 c unless noted) drain source breakdown vs. junction t emperature 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 - 50 - 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j - junction temperature ( c) v sd - source-to-drain voltage (v) - source current (a) i s 100 10 1 0.3 0.6 0.9 1.5 v gs = 10 v i d = 15 a t j = 25 c t j = 150 c (normalized) - on-resistance ( r ds(on) ) 0 190 200 210 220 230 240 250 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature ( c) (v) v (br)dss i d = 1.0 ma 1.2
SUM16N20-125 vishay siliconix new product document number: 72076 s-31273?rev. c, 16-jun-03 www.vishay.com 5 thermal ratings 0 4 8 12 16 20 0 25 50 75 100 125 150 175 safe operating area v ds - drain-to-source voltage (v) 100 10 0.1 1 10 1000 0.1 t c = 25 c single pulse maximum avalanche and drain current vs. case t emperature t c - ambient temperature ( c) - drain current (a) i d normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 10 normalized effective transient thermal impedance 0.2 0.1 duty cycle = 0.5 - drain current (a) i d 1 ms 10 ms 100 ms dc 10 s 100 s single pulse 0.05 0.02 1 100 1 limited by r ds(on)
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